Optical Activity of Group III-V Quantum Dots Directly Embedded in Silicon M. Gawełczyk, K. Gawarecki arXiv:2504.20981 (to be submitted to Physical Review B)
Monolithic Integration of Sub-50 nm III–V Nano-Heterostructures on Si (001) for Telecom Photonics A. Nanwani, P. Wyborski, M.S. Seifner, S. Kadkhodazadeh, G. Sęk, K. Yvind, P. Holewa, E. Semenova Adv. Optical Mater. 2403419 (2025)
Xenon plasma-focused ion beam milling for fabrication of high-purity, bright single-photon sources operating in the C-band M. Jaworski, P. Mrowiński, M. Mikulicz, P. Holewa, L Zeidler, M. Syperek, E. Semenova, G. Sęk Opt. Express 32, 41089 (2024)
Effects of Dislocation Filtering Layers on Optical Properties of Third Telecom Window Emitting InAs/InGaAlAs Quantum Dots Grown on Silicon Substrates W. Rudno-Rudziński, M. Gawełczyk, P. Podemski, E. Cybula, S. Gorantla, R. Balasubramanian, V. Sichkovskyi, A.J. Willinger, G. Eisenstein, J.P. Reithmaier, G. Sęk ACS Appl. Mater. Interfaces 16, 51150 (2024)
High-resolution X-ray diffraction to probe quantum dot asymmetry J. Serafińczuk, W. Rudno-Rudziński, M. Gawełczyk, P. Podemski, K. Parzyszek, A. Piejko, V. Sichkovskyi, J.P. Reithmaier, G. Sęk Measurement 221, 113451 (2023)
X-ray diffraction studies of residual strain in AlN/sapphire templates J. Serafińczuk, L. Pawlaczyk, K. Moszak, D. Pucicki, R. Kudrawiec, D. Hommel Measurement 200, 111611 (2022)
Fast and efficient approach for multi-component quantum wells analysis based on FFT L. Pawlaczyk, D. Pucicki, J. Serafińczuk Measurement 186, 110118 (2021)
