Information about the Project

Title
Optical, structural and electronic properties of III-V quantum dots on silicon

Principal investigator
prof. dr hab. inż. Grzegorz Sęk

Project locations
Wrocław University of Science and Technology;
Łukasiewicz Research Network – PORT Polish Center for Technology Development

International partners

University of Kassel, Germany (Prof. Johann Peter Reithmaier)

Technical University of Denmark, Denmark (Dr. Elizaveta Semenova)

Period
2020-2024

Funding source
National Science Centre, Poland

Project type
OPUS 33, ST5

Project number
2019/33/B/ST5/02941

Budget
1 483 800 PLN

Project objectives
The aim of the project is to investigate the structural, electronic, and optical properties of a new class of nanomaterials based on novel types of III-V quantum dots (QDs), grown on silicon substrates or embedded in silicon matrices, in the context of developing active elements for photonic integrated circuits (PICs).

The studies will include both ensembles of QDs, to investigate the potential for laser and detector applications, as well as single nanostructure properties useful for sophisticated applications related to applications in quantum technologies, especially in quantum photonic integrated circuits (QPICs).

We aimed to verify the hypothesis whether InAs/GaAs(InP) quantum dots grown on silicon substrates with intermediate buffer layers and/or defect filtering layers, or III-V QDs embedded directly in silicon matrices, can achieve crystallographic quality and optical properties comparable with III-V QDs grown on native substrates. This investigation especially concerns the influence of different dielectric environments, strain conditions, and defect formation on the nanostructures’ morphology, their electronic structure, and radiative efficiency.